On March 13, Chinese GaN-on-Si power semiconductor leader Innoscience announced that U.S. Customs and Border Protection (CBP) has ruled its next-generation GaN products are not subject to the ITC's Limited Exclusion Order (LEO) in Case 337-TA-1366, removing all barriers to U.S. market access.

The ruling, issued on February 20, 2026, confirms these high-efficiency, high-power-density GaN products can now enter the U.S. freely, targeting applications in AI data centers, robotics, solar microinverters, and EV power systems. As the world's largest 8-inch GaN production base, Innoscience strengthens its industry leadership with this breakthrough.

Background: In May 2023, EPC sued Innoscience alleging patent infringement. EPC later withdrew three patent claims, the ITC ruled Innoscience did not infringe, and the US PTO declared all asserted claims of the core patent invalid—eliminating the legal basis for EPC's allegations.

The existing LEO applies only to older Innoscience GaN chips and does not affect customers' PCBA power products completed outside the U.S. The ruling remains under appeal; if upheld, the LEO will be permanently revoked. Effective February 20, 2026, Innoscience's new-generation products (with "AD" suffix) face no U.S. business restrictions.

ICgoodFind: Innoscience's U.S. market clearance validates its GaN technology and competitiveness, paving the way for domestic GaN devices to go global.