Infineon IPN60R600P7S: A 600V 60mΩ CoolMOS™ Power Transistor in a Super-SO8 Package

The relentless pursuit of higher efficiency, increased power density, and enhanced reliability in power electronics drives continuous innovation in semiconductor technology. At the forefront of this innovation is Infineon Technologies with its CoolMOS™ family. The IPN60R600P7S stands as a prime example, integrating a high-performance 600V superjunction MOSFET with an exceptionally low on-state resistance of just 60mΩ, all housed within the compact and industry-standard Super-SO8 (SSO8) package.

This device is engineered to address the demanding requirements of modern switched-mode power supplies (SMPS), including server and telecom power units, industrial power systems, and high-power chargers. The core of its performance lies in Infineon's advanced superjunction (SJ) technology. This technology enables a significant reduction in both conduction and switching losses compared to traditional planar MOSFETs. The ultra-low RDS(on) minimizes energy wasted as heat during the on-state, while the optimized gate charge (Qg) and low figures of merit (e.g., RDS(on) x Qg) ensure swift and efficient switching transitions. This combination is crucial for achieving higher switching frequencies, which in turn allows for the use of smaller passive components like transformers and capacitors, directly contributing to a higher overall power density in the final design.

A key feature of the IPN60R600P7S is its advanced package technology. The Super-SO8 package offers a footprint-compatible upgrade path from standard SO-8 devices but with vastly superior thermal and electrical characteristics. It features an exposed top-side cooling pad, which provides an extremely low thermal resistance path from the silicon die to the ambient or a heatsink. This superior thermal management allows the MOSFET to handle high power levels without overheating, ensuring long-term reliability and robustness in space-constrained applications.

Furthermore, the IPN60R600P7S is designed with ease of use and system stability in mind. It offers a high level of dv/dt and avalanche ruggedness, enhancing its resilience against voltage spikes and harsh operating conditions commonly encountered in power conversion circuits. This intrinsic robustness helps designers create more reliable end-products with greater margins of safety.

ICGOOODFIND: The Infineon IPN60R600P7S is a benchmark component that perfectly balances high voltage capability, ultra-low losses, and superior thermal performance in a miniaturized package. It is an ideal solution for designers pushing the limits of efficiency and power density in next-generation AC-DC conversion and power factor correction (PFC) stages.

Keywords: CoolMOS™, High Power Density, Super-SO8 Package, Ultra-Low RDS(on), Superjunction Technology.