Infineon IPC100N04S5L-1R1: A High-Performance 100 A OptiMOS 5 Power MOSFET

In the realm of power electronics, efficiency, thermal performance, and reliability are paramount. Addressing these critical demands, Infineon Technologies introduces the IPC100N04S5L-1R1, a standout member of its advanced OptiMOS™ 5 power MOSFET family. This device is engineered to set a new benchmark for high-current, low-voltage applications, delivering exceptional performance in a compact and robust package.

At the heart of this MOSFET is its impressive current handling capability of 100 A continuous current, making it an ideal choice for demanding high-power scenarios. With a low drain-source voltage (VDS) of 40 V, it is perfectly suited for applications such as server and telecom power supplies, industrial motor drives, and high-density DC-DC converters. The device’s standout feature is its remarkably low on-state resistance (RDS(on)) of just 1.1 mΩ at 10 V. This ultra-low resistance is a key contributor to minimizing conduction losses, which directly translates into higher system efficiency and reduced heat generation.

Thermal management is a critical factor in power design, and the IPC100N04S5L-1R1 excels in this area. The low RDS(on) inherently leads to lower power dissipation. Furthermore, its low thermal resistance and high efficiency allow it to operate effectively even under strenuous conditions, reducing the need for complex and bulky cooling solutions. This makes it a superior candidate for space-constrained applications where thermal performance is as crucial as electrical performance.

Packaged in the innovative Infineon Power-SO8 (IPS) package, this MOSFET offers an excellent balance between size and performance. The package provides a very low parasitic inductance and is designed for effective heat dissipation away from the silicon die. This is particularly beneficial in high-switching-frequency circuits, where it helps to minimize voltage overshoot and electromagnetic interference (EMI), leading to more stable and reliable system operation.

Another significant advantage of the OptiMOS™ 5 technology is the enhanced switching performance. The IPC100N04S5L-1R1 features optimized gate charge (Qg) and low internal capacitances. This results in faster switching speeds, reduced switching losses, and the ability to operate at higher frequencies. For designers, this means they can create smaller, more efficient power supplies and motor controllers by using smaller magnetic components and capacitors.

ICGOOFind Summary: The Infineon IPC100N04S5L-1R1 exemplifies the peak of power MOSFET technology, combining an ultra-low 1.1 mΩ RDS(on) with a high 100 A current rating in a compact IPS package. It is engineered to maximize efficiency, simplify thermal management, and enable higher power density in modern electronic systems, making it an exceptional component for next-generation power design.

Keywords: OptiMOS™ 5, Low RDS(on), High Current, Power-SO8 (IPS), Power Efficiency.