Infineon BSC0802LSATMA1 OptiMOS™ 5 Power MOSFET Datasheet and Application Overview
The Infineon BSC0802LSATMA1 is a state-of-the-art N-channel power MOSFET from Infineon's OptiMOS™ 5 40 V family, representing a significant leap forward in power efficiency and power density for a wide range of DC-DC conversion and motor control applications. This device is engineered to meet the escalating demands of modern electronics for higher efficiency, smaller form factors, and improved thermal performance.
A primary strength of the BSC0802LSATMA1 lies in its exceptionally low typical on-state resistance (R DS(on)) of just 0.8 mΩ at 10 V. This ultra-low resistance is the key to minimizing conduction losses, which directly translates into higher system efficiency and reduced heat generation. This allows designers to either achieve more performance in the same space or create more compact designs without sacrificing thermal margins. Housed in the space-saving PG-TDSON-8 (SuperSO8) package, this MOSFET is ideal for high-current, high-density power supplies in computing, telecom, and industrial environments.
The OptiMOS™ 5 technology also offers superior switching performance. The device features low gate charge (Q G) and low figures of merit (e.g., R DS(on) Q G), which are critical for achieving high switching frequencies. Operating at higher frequencies enables the use of smaller passive components like inductors and capacitors, further reducing the overall system size and cost.
Thermal management is simplified due to the part's high efficiency and the package's effective cooling capabilities. The exposed die pad ensures excellent thermal connection to the PCB, allowing heat to be efficiently dissipated into the copper planes. This robust thermal performance ensures high reliability under continuous operation.
Typical applications where the BSC0802LSATMA1 excels include:
Synchronous rectification in switched-mode power supplies (SMPS) and DC-DC converters for servers and VRMs.
Motor drive and control circuits in industrial automation, robotics, and automotive systems.
Battery management systems (BMS) and load switching solutions.
ICGOO
The Infineon BSC0802LSATMA1 OptiMOS™ 5 MOSFET sets a high bar for performance in its class. Its combination of ultra-low R DS(on), excellent switching characteristics, and a thermally efficient package makes it an outstanding choice for designers pushing the limits of power density and efficiency in next-generation electronic equipment.
Keywords:
1. OptiMOS™ 5
2. Low R DS(on)
3. Power Density
4. Synchronous Rectification
