Infineon IPL60R125P7: A 600V CoolMOS™ P7 Power Transistor for High-Efficiency Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power conversion systems. At the heart of these systems, the power switching device is critical. The Infineon IPL60R125P7, a 600V CoolMOS™ P7 MOSFET, stands out as a premier solution engineered to meet these challenges head-on in a wide array of high-performance applications.

This superjunction MOSFET is designed to offer an exceptional balance between low conduction losses and ultra-low switching losses. A key metric for any power transistor is its on-state resistance (R DS(on)), and the IPL60R125P7 boasts an impressively low maximum of 0.125 Ω. This directly translates to reduced power dissipation during conduction, leading to cooler operation and higher overall system efficiency.

The P7 technology from Infineon is the driving force behind its superior performance. This generation introduces significant advancements over its predecessors, including an optimized charge balance that minimizes switching losses without compromising ruggedness. This makes the device exceptionally suited for high-frequency switching operations, allowing designers to shrink the size of magnetic components like inductors and transformers, thereby increasing power density.

Furthermore, the device incorporates a fast and robust body diode. This feature is particularly valuable in bridge topologies, such as power factor correction (PFC) circuits and motor drive inverters, where the body diode's reverse recovery characteristics are vital for minimizing losses and preventing potential voltage spikes that could damage the system.

The IPL60R125P7 is an ideal choice for demanding applications, including:

Switched-Mode Power Supplies (SMPS) for servers, telecom, and industrial equipment.

Power Factor Correction (PFC) stages, both interleaved and single-phase.

Solar inverters and other renewable energy systems.

High-frequency LLC resonant converters for high-end computing.

Its high voltage rating of 600V provides a reliable safety margin for operations off universal mains voltages (85 VAC – 305 VAC). The combination of low gate charge (Q G) and low output capacitance (C OSS) ensures that driving the MOSFET is efficient and that turn-on and turn-off transitions are swift and clean.

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DFIND Summary: The Infineon IPL60R125P7 CoolMOS™ P7 represents a significant leap in power MOSFET technology, delivering an optimal blend of ultra-low R DS(on) and minimal switching losses. Its advanced superjunction structure and robust design make it a cornerstone component for engineers striving to achieve new heights in efficiency, power density, and reliability in modern high-performance switching power supplies and conversion systems.

Keywords:

1. CoolMOS™ P7

2. Low Switching Losses

3. High-Efficiency

4. Superjunction MOSFET

5. Power Density