Infineon SDT12S60: High-Performance 60V Dual N-Channel MOSFET for Automotive and Industrial Applications

In the demanding worlds of automotive and industrial electronics, power efficiency, reliability, and space-saving design are paramount. The Infineon SDT12S60 stands out as a premier solution, engineered specifically to meet these rigorous challenges. This dual N-channel MOSFET in a compact PG-TDSON-8 package delivers exceptional performance by integrating two advanced 60V OptiMOS™ MOSFETs in a single chip, optimizing power density and system reliability.

A key strength of the SDT12S60 lies in its ultra-low typical on-state resistance (RDS(on)) of just 1.8 mΩ at 10 V. This remarkably low resistance minimizes conduction losses, leading to significantly higher efficiency and reduced heat generation. Such efficiency is critical for applications like electric power steering (EPS), brake systems, and DC-DC converters in vehicles, where every watt saved contributes to extended battery life and improved fuel economy. In industrial settings, this translates to lower operational costs and enhanced reliability for motor drives, robotics, and power supplies.

The device is built to withstand the harsh environments typical of its target applications. It boasts excellent robustness and a high maximum junction temperature of 175°C, ensuring stable operation under severe thermal and electrical stress. Furthermore, its qualification for AEC-Q101 compliance guarantees that it meets the stringent quality and reliability standards required for automotive electronics. The dual N-channel configuration simplifies board layout, reduces component count, and saves valuable PCB space, which is always at a premium in modern electronic systems.

The SDT12S60 is also characterized by its superior switching performance, which helps to lower switching losses in high-frequency circuits. This makes it an ideal choice for high-performance PWM controllers and other switching applications that demand fast response times and efficient power management.

ICGOODFIND: The Infineon SDT12S60 is a top-tier dual N-channel MOSFET that sets a high benchmark for power efficiency and integration. Its exceptional low RDS(on), compact packaging, and automotive-grade robustness make it an indispensable component for designers aiming to create more efficient, reliable, and compact next-generation automotive and industrial systems.

Keywords: OptiMOS™, AEC-Q101, Low RDS(on), Power Density, Dual N-Channel.