Infineon IPD80R750P7: A High-Performance Power MOSFET for Efficient Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. At the heart of many advanced power conversion systems, from server power supplies and telecom infrastructure to industrial motor drives and renewable energy applications, lies the power MOSFET. The Infineon IPD80R750P7 stands out as a premier component engineered to meet these stringent requirements, offering a blend of ultra-low on-state resistance and exceptional switching performance.

This MOSFET is constructed using Infineon's proprietary superjunction (SJ) technology, a key innovation that enables a significant reduction in specific on-resistance for a given die size. The IPD80R750P7 boasts a maximum drain-source on-state resistance (RDS(on)) of just 75 mΩ at 10 V gate-source voltage. This remarkably low RDS(on) is the primary contributor to minimizing conduction losses. When the device is fully turned on, less energy is wasted as heat, leading to cooler operation and higher overall system efficiency, particularly in applications with high continuous currents.

Beyond its superior conduction characteristics, the device is optimized for fast switching. The low gate charge (Qg) and reduced internal capacitances (such as Ciss, Coss, and Crss) ensure rapid turn-on and turn-off transitions. This capability is crucial for high-frequency switching power supplies, as it allows designers to increase the switching frequency. A higher frequency, in turn, enables the use of smaller passive components like inductors and transformers, directly contributing to increased power density and reduced system size and cost. The IPD80R750P7 is also characterized by its high ruggedness and avalanche energy capability, enhancing its reliability in harsh operating conditions where voltage spikes may occur.

Housed in a TO-220 package, this MOSFET offers a familiar and robust mechanical form factor that facilitates easy mounting and efficient heat dissipation through an attached heatsink. Its ability to handle a continuous drain current (ID) of 11.5 A and a maximum drain-source voltage (VDS) of 800 V makes it exceptionally versatile for a broad spectrum of off-line power conversion tasks.

ICGOOODFIND: The Infineon IPD80R750P7 is a high-efficiency superjunction MOSFET that sets a high benchmark for performance in power switching applications. Its industry-leading low RDS(on) and fast switching speed make it an ideal choice for designers aiming to maximize efficiency and power density while ensuring robust and reliable operation in demanding environments.

Keywords: Power MOSFET, Superjunction Technology, Low RDS(on), High-Efficiency Switching, Avalanche Ruggedness.