Infineon BSZ146N10LS5ATMA1 100V N-Channel MOSFET for High-Efficiency Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power switching components. At the heart of many advanced power conversion designs, from server SMPS and telecom infrastructure to motor drives and renewable energy systems, lies the MOSFET. The Infineon BSZ146N10LS5ATMA1 stands out as a premier 100V N-Channel MOSFET engineered specifically to meet these challenges, offering a blend of superior switching performance and robust reliability.

This device is built upon Infineon's advanced OptiMOS™ 5 technology, a platform renowned for its exceptional balance of on-state resistance and gate charge. The BSZ146N10LS5ATMA1 exemplifies this with an ultra-low RDS(on) of just 1.6 mΩ (max. at VGS = 10 V). This minimized resistance is crucial for reducing conduction losses, which directly translates into higher efficiency, especially in high-current applications. Less power wasted as heat means cooler operation, reduced thermal management requirements, and the potential for more compact system designs.

Beyond its stellar static performance, the device is optimized for dynamic operation. The low gate charge (QG) and figures of merit like RDS(on) QG ensure extremely fast switching capabilities. This results in significantly lower switching losses, which are a dominant factor in high-frequency circuits such as DC-DC converters and PWM motor controllers. Operating at higher frequencies allows designers to use smaller passive components like inductors and capacitors, further increasing power density.

The 100V drain-source voltage rating provides a comfortable safety margin in 48V bus systems, a common voltage in computing and telecommunications, ensuring robust operation and protection against voltage spikes. Housed in a SuperSO8 package (PG-TDSON-8), the MOSFET offers an excellent power-to-footprint ratio. This package also features an exposed thermal pad, which greatly enhances thermal dissipation by efficiently transferring heat from the silicon die to the PCB.

Furthermore, the device is characterized by high ruggedness and a commutation ruggedness, making it a reliable choice in demanding environments. Its lead-free and RoHS-compliant construction aligns with global environmental standards.

ICGOODFIND: The Infineon BSZ146N10LS5ATMA1 is a top-tier component that empowers engineers to push the boundaries of efficiency and miniaturization. Its exceptional combination of the lowest RDS(on) in its class, fast switching speed, and robust thermal performance makes it an ideal solution for next-generation high-efficiency power conversion systems.

Keywords: OptiMOS™ 5, Low RDS(on), High-Efficiency Power Conversion, Fast Switching, SuperSO8 Package.